Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

ABSTRACT

A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2015-117206, filed on Jun. 10, 2015, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a method of manufacturing asemiconductor device, a substrate processing apparatus, and a recordingmedium.

BACKGROUND

As an example of processes of manufacturing a semiconductor device, aprocess of forming a film on a substrate is often carried out bysupplying a precursor to the substrate accommodated within a processchamber.

SUMMARY

The present disclosure provides some embodiments of a technique capableof improving a quality of a film formed on a substrate.

According to one embodiment of the present disclosure, there is provideda technique, including: forming a seed layer containing a predeterminedelement on a substrate by performing a process a predetermined number oftimes, the process including alternately performing: supplying a firstprecursor to the substrate to form an adsorption layer of the firstprecursor, the first precursor containing the predetermined element anda ligand which is coordinated to the predetermined element and whichcontains at least one of carbon or nitrogen, and supplying a liganddesorption material to the substrate to desorb the ligand from theadsorption layer of the first precursor; and supplying a secondprecursor containing the predetermined element and not containing theligand to the substrate to form a film containing the predeterminedelement on the seed layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a schematic configuration diagram of a vertical typeprocessing furnace of a substrate processing apparatus suitably used inone embodiment of the present disclosure, in which a portion of theprocessing furnace is shown in a vertical cross sectional view.

FIG. 2 is a schematic configuration diagram of the vertical typeprocessing furnace of the substrate processing apparatus suitably usedin one embodiment of the present disclosure, in which a portion of theprocessing furnace is shown in a cross sectional view taken along lineA-A in FIG. 1A.

FIG. 3 is a schematic configuration diagram of a controller of thesubstrate processing apparatus suitably used in one embodiment of thepresent disclosure, in which a control system of the controller is shownin a block diagram.

FIG. 4 is a diagram illustrating a film forming sequence according toone embodiment of the present disclosure.

FIG. 5 is a diagram illustrating an exemplary modification of the filmforming sequence according to one embodiment of the present disclosure.

FIG. 6 is a diagram illustrating another exemplary modification of thefilm forming sequence according to one embodiment of the presentdisclosure.

FIG. 7 is a diagram illustrating another exemplary modification of thefilm forming sequence according to one embodiment of the presentdisclosure.

FIG. 8 is a diagram illustrating another exemplary modification of thefilm forming sequence according to one embodiment of the presentdisclosure.

FIG. 9 is a diagram illustrating another exemplary modification of thefilm forming sequence according to one embodiment of the presentdisclosure.

FIG. 10 is a diagram illustrating another exemplary modification of thefilm forming sequence according to one embodiment of the presentdisclosure.

FIG. 11 is a diagram illustrating another exemplary modification of thefilm forming sequence according to one embodiment of the presentdisclosure.

FIG. 12A is a schematic configuration diagram of a processing furnace ofa substrate processing apparatus suitably used in another embodiment ofthe present disclosure, in which the portion of the processing furnaceis shown in a vertical cross sectional view, and FIG. 12B is a schematicconfiguration diagram of a processing furnace of a substrate processingapparatus suitably used in yet another embodiment of the presentdisclosure, in which the portion of the processing furnace is shown in avertical cross sectional view.

DETAILED DESCRIPTION One Embodiment of the Present Disclosure

One embodiment of the present disclosure will be described as below withreference to FIGS. 1 to 3.

(1) Configuration of the Substrate Processing Apparatus

As illustrated in FIGS. 1A and 1B, a processing furnace 202 includes aheater 207 as a heating mechanism (temperature adjustment part). Theheater 207 has a cylindrical shape and is supported by a heater base(not shown) serving as a retaining plate so as to be verticallyinstalled. As will be described hereinbelow, the heater 207 functions asan activation mechanism (an excitation part) configured to thermallyactivate (excite) a gas.

A reaction tube 203 is disposed inside the heater 207 to be concentricwith the heater 207. The reaction tube 203 is made of a heat resistantmaterial such as, e.g., quartz (SiO₂), silicon carbide (SiC) or the likeand has a cylindrical shape with its upper end closed and its lower endopened. A manifold (inlet flange) 209 is disposed below the reactiontube 203 in a concentric relationship with the reaction tube 203. Themanifold 209 is made of metal, e.g., stainless steel (SUS), and has acylindrical shape with its upper and lower ends opened. The upper end ofthe manifold 209 engages with the lower end of the reaction tube 203.The manifold 209 is configured to support the reaction tube 203. AnO-ring 220 a as a seal member is installed between the manifold 209 andthe reaction tube 203. The manifold 209 is supported by the heater base.Thus, the reaction tube 203 comes into a vertically mounted state. Aprocessing vessel (reaction vessel) is mainly configured by the reactiontube 203 and the manifold 209. A process chamber 201 is formed in ahollow cylindrical portion of the processing vessel. The process chamber201 is configured to accommodate a plurality of wafers 200 assubstrates. The wafers 200 are horizontally stacked in multiple stagesalong a vertical direction in a boat 217 which will be describedhereinbelow.

Nozzles 249 a and 249 b are installed in the process chamber 201 so asto penetrate a sidewall of the manifold 209. Gas supply pipes 232 a and232 b are respectively connected to the nozzles 249 a and 249 b. In thisway, two nozzles 249 a and 249 b and two gas supply pipes 232 a and 232b are installed in the reaction tube 203 and are capable of supplyingplural types of gases into the process chamber 201.

Mass flow controllers (MFCs) 241 a and 241 b, which are flow ratecontrollers (flow rate control parts), and valves 243 a and 243 b, whichare opening/closing valves, are installed in the gas supply pipes 232 aand 232 b sequentially from the corresponding upstream sides,respectively. Gas supply pipes 232 c and 232 d, which supply an inertgas, are respectively connected to the gas supply pipes 232 a and 232 bat the downstream side of the valves 243 a and 243 b. MFCs 241 c and 241d, which are flow rate controllers (flow rate control parts), and valves243 c and 243 d, which are opening/closing valves, are respectivelyinstalled in the gas supply pipes 232 c and 232 d sequentially from thecorresponding upstream sides.

The nozzle 249 a is connected to a front end portion of the gas supplypipe 232 a. As illustrated in FIG. 2, the nozzle 249 a is disposed in aspace with an annular plan-view shape between the inner wall of thereaction tube 203 and the wafers 200 such that the nozzle 249 a extendsupward along a stacking direction of the wafers 200 from a lower portionof the inner wall of the reaction tube 203 to an upper portion of theinner wall of the reaction tube 203. Specifically, the nozzle 249 a isinstalled at a lateral side of a wafer arrangement region in which thewafers 200 are arranged, namely in a region which horizontally surroundsthe wafer arrangement region, so as to extend along the waferarrangement region. That is, the nozzle 249 a is installed in aperpendicular relationship with the surfaces (flat surfaces) of thewafers 200 at a lateral side of the end portions (peripheral edgeportions) of the wafers 200 which are carried into the process chamber201. The nozzle 249 a is configured as an L-shaped nozzle. A horizontalportion of the nozzle 249 a is installed to penetrate a sidewall of themanifold 209. A vertical portion of the nozzle 249 a is installed toextend upward at least from one end portion of the wafer arrangementregion toward the other end portion of the wafer arrangement region. Gassupply holes 250 a for supplying a gas are formed on the side surface ofthe nozzle 249 a. The gas supply holes 250 a are opened toward thecenter of the reaction tube 203 so as to allow a gas to be suppliedtoward the wafers 200. The gas supply holes 250 a may be formed in aplural number between the lower portion of the reaction tube 203 and theupper portion of the reaction tube 203. The respective gas supply holes250 a may have the same aperture area and may be formed at the sameaperture pitch.

The nozzle 249 b is connected to a front end portion of the gas supplypipe 232 b. The nozzle 249 b is installed within a buffer chamber 237which is a gas diffusion space. The buffer chamber 237 is formed betweenthe inner wall of the reaction tube 203 and a partition wall 237 a. Asillustrated in FIG. 2, the buffer chamber 237 (the partition wall 237 a)is installed in a space with an annular plan-view shape between theinner wall of the reaction tube 203 and the wafers 200 such that thebuffer chamber 237 (the partition wall 237 a) extends along the stackingdirection of the wafers 200 from the lower portion of the inner wall ofthe reaction tube 203 to the upper portion of the inner wall of thereaction tube 203. That is, the buffer chamber 237 (the partition wall237 a) is installed at the lateral side of the wafer arrangement region,namely in the region which horizontally surrounds the wafer arrangementregion, so as to extend along the wafer arrangement region. Gas supplyholes 250 c for supplying a gas are formed in an end portion of thesurface of the partition wall 237 a which faces (adjoins) the wafers200. The gas supply holes 250 c are opened toward the center of thereaction tube 203 so as to allow a gas to be supplied toward the wafers200. The gas supply holes 250 c may be formed in a plural number betweenthe lower portion of the reaction tube 203 and the upper portion of thereaction tube 203. The respective gas supply holes 250 c may have thesame aperture area and may be formed at the same aperture pitch.

The nozzle 249 b is installed in an end portion of the buffer chamber237 opposite to the end portion of the buffer chamber 237 having the gassupply holes 250 c such that the nozzle 249 b extends upward along thestacking direction of the wafers 200 from the lower portion of the innerwall of the reaction tube 203 to the upper portion of the reaction tube203. Specifically, the nozzle 249 b is installed at the lateral side ofthe wafer arrangement region in which the wafers 200 are arranged,namely in the region which horizontally surrounds the wafer arrangementregion, so as to extend along the wafer arrangement region. That is, thenozzle 249 b is installed in a perpendicular relationship with thesurfaces of the wafers 200 at the lateral side of the end portions ofthe wafers 200 which are carried into the process chamber 201. Thenozzle 249 b is configured as an L-shaped nozzle. A horizontal portionof the nozzle 249 b is installed to penetrate the sidewall of themanifold 209. A vertical portion of the nozzle 249 b is installed toextend upward at least from one end portion of the wafer arrangementregion toward the other end portion of the wafer arrangement region. Gassupply holes 250 b for supplying a gas are formed on the side surface ofthe nozzle 249 b. The gas supply holes 250 b are opened toward thecenter of the buffer chamber 237. Similar to the gas supply holes 250 c,the gas supply holes 250 b may be formed in a plural number between thelower portion of the reaction tube 203 and the upper portion of thereaction tube 203. In the case where the differential pressure betweenthe interior of the buffer chamber 237 and the interior of the processchamber 201 is small, the aperture area and the aperture pitch of thegas supply holes 250 b may be respectively set to remain constantbetween the upstream side (lower portion) and the downstream side (upperportion) of the nozzle 249 b. In the case where the differentialpressure between the interior of the buffer chamber 237 and the interiorof the process chamber 201 is large, the aperture area of the gas supplyholes 250 b may be set to become gradually larger from the upstream sidetoward the downstream side of the nozzle 249 b, or the aperture pitch ofthe gas supply holes 250 b may be set to become gradually smaller fromthe upstream side toward the downstream side of the nozzle 249 b.

By adjusting the aperture area or the aperture pitch of the gas supplyholes 250 b between the upstream side and the downstream side asmentioned above, it is possible to inject a gas from the gas supplyholes 250 b at different flow velocities but at a substantially equalflow rate. The gas injected from the respective gas supply holes 250 bis first introduced into the buffer chamber 237. This makes it possibleto equalize the flow velocities of the gas within the buffer chamber237. The gas injected from the respective gas supply holes 250 b intothe buffer chamber 237 is injected from the gas supply holes 250 c intothe process chamber 201 after the particle velocity of the gas isrelaxed within the buffer chamber 237. The gas injected from therespective gas supply holes 250 b into the buffer chamber 237 has auniform flow rate and a uniform flow velocity when injected from therespective gas supply holes 250 c into the process chamber 201.

As described above, in the present embodiment, a gas is transferredthrough the nozzles 249 a and 249 b and the buffer chamber 237, whichare disposed in a vertically-elongated space with an annular plan-viewshape, i.e., a cylindrical space, defined by the inner surface of theside wall of the reaction tube 203 and the end portions (peripheral edgeportions) of the wafers 200 arranged within the reaction tube 203. Thegas is initially injected into the reaction tube 203, near the wafers200, through the gas supply holes 250 a to 250 c formed in the nozzles249 a and 249 b and the buffer chamber 237. Accordingly, the gassupplied into the reaction tube 203 mainly flows in the reaction tube203 in a direction parallel to surfaces of the wafers 200, i.e., in ahorizontal direction. With this configuration, the gas can be uniformlysupplied to the respective wafers 200. This makes it possible to improvethe uniformity in the thickness of a film formed on each of the wafers200. In addition, the gas flowing on the surfaces of the wafers 200after the reaction, i.e., the reacted residual gas, flows toward anexhaust port, i.e., the exhaust pipe 231 which will be described later.The flow direction of the residual gas is not limited to a verticaldirection but may be appropriately decided depending on a position ofthe exhaust port.

A first precursor, which includes silicon (Si) as a predeterminedelement and a ligand which is coordinated to the Si and which containsat least one of carbon (C) or nitrogen (N), for example, an aminosilaneprecursor gas, is supplied from the gas supply pipe 232 a into theprocess chamber 201 via the MFC 241 a, the valve 243 a and the nozzle249 a.

The precursor gas refers to a gaseous precursor, for example, a gasobtained by vaporizing a precursor which remains in a liquid state undera room temperature and an atmospheric pressure, or a precursor whichremains in a gas state under a room temperature and an atmosphericpressure. When the term “precursor” is used herein, it may refer to “aliquid precursor staying in a liquid state,” “a precursor gas staying ina gaseous state,” or both. Furthermore, the aminosilane precursor refersto a silane precursor having an amino group and a silane precursorhaving an alkyl group such as a methyl group, an ethyl group, a butylgroup or the like. The aminosilane precursor is a precursor containingat least Si, C and N. That is, the aminosilane precursor referred toherein may be said to be an organic precursor or may be said to be anorganic aminosilane precursor. As the aminosilane precursor gas, it maybe possible to use, for example, a diisopropylaminosilane(SiH₃N[CH(CH₃)₂]₂, abbreviation: DIPAS) gas. The DIPAS gas may be saidto be a precursor gas which contains one Si atom in one molecule andwhich has a Si—N bond, a Si—H bond, an N—C bond or the like but does nothave a Si—C bond. The DIPAS gas acts as a Si source at a seed layerforming step which will be described later. In the case of using aliquid precursor such as DIPAS or the like which stays in a liquid stateunder a room temperature and an atmospheric pressure, the precursor of aliquid state is vaporized by a vaporization system such as a vaporizer,a bubbler or the like and is supplied as a silane precursor gas (a DIPASgas, etc.).

A second precursor, which contains Si as a predetermined element andwhich does not contain the aforementioned ligand, for example, a silanehydride precursor gas (silicon hydride gas), is supplied from the gassupply pipe 232 a into the process chamber 201 via the MFC 241 a, thevalve 243 a and the nozzle 249 a. The silicon hydride gas refers to asilane precursor gas which contains H and which does not contain C andN. As the silicon hydride gas, it may be possible to use a substancerepresented by a chemical formula, Si_(x)H_(y) (where x or y is aninteger of 1 or more), for example, a monosilane (SiH₄) gas. The SiH₄gas may be said to be a precursor gas which contains one Si atom in onemolecule and which has a Si—H bond but does not have a Si—C bond, a Si—Nbond and an N—C bond. The SiH₄ gas acts as a Si source at a CVD filmforming step which will be described later.

A ligand desorption material is supplied from the gas supply pipes 232 aand 232 b into the process chamber 201 via the MFCs 241 a and 241 b, thevalves 243 a and 243 b, the nozzles 249 a and 249 b, and the bufferchamber 237.

As the ligand desorption material, it may be possible to use aplasma-excited reducing gas or a non-plasma-excited reducing gas.

As the reducing gas, it may be possible to use at least one H-containinggas selected from a group consisting of a hydrogen (H₂) gas and adeuterium (D₂) gas. Furthermore, as the reducing gas, it may be possibleto use, for example, at least one H-containing gas selected from a groupconsisting of the aforementioned silicon hydride gas and a boron hydridegas containing boron (B). As the silicon hydride gas, it may be possibleto use, in addition to the aforementioned SiH₄ gas, for example, atleast one gas selected from a group consisting of a disilane (Si₂H₆)gas, a trisilane (Si₃H₈) gas and a tetrasilane (Si₄H₁₀) gas. As theboron hydride gas, it may be possible to use a substance represented bya chemical formula, B_(x)H_(y) (where x or y is an integer of 1 ormore), for example, at least one gas selected from a group consisting ofa borane (BH₃) gas, a diborane (B₂H₆) gas, a triborane (B₃H₈ or B₃H₉)gas and a tetraborane (B₄H₁₀ or B₄H₁₂) gas.

Furthermore, as the ligand desorption material, it may be possible touse a plasma-excited inert gas. As the inert gas, it may be possible touse at least one gas selected from a group consisting of a nitrogen (N₂)gas and a rare gas. As the rare gas, it may be possible to use at leastone gas selected from a group consisting of an argon (Ar) gas, a helium(He) gas, a neon (Ne) gas and a xenon (Xe) gas.

Moreover, as the ligand desorption material, it may be possible to use aplasma-excited inert gas and a non-plasma-excited reducing gas together.That is, it may be possible to use a mixture of a plasma-excited inertgas and a non-plasma-excited reducing gas. In this case, thenon-plasma-excited reducing gas is indirectly excited by theplasma-excited inert gas. As the non-plasma-excited reducing gas, it maybe possible to use a thermally-excited reducing gas.

In addition, as the ligand desorption material, it may be possible touse a halogen-element-containing gas. As the halogen-element-containinggas, it may be possible to use, for example, at least one gas selectedfrom a group consisting of a chlorine (CD-containing gas and a fluorine(F)-containing gas.

As the Cl-containing gas, it may be possible to use, in addition to achlorine (Cl₂) gas and a hydrogen chloride (HCl) gas, for example, a gascontaining Si and Cl, such as a chlorosilane gas or the like. As thechlorosilane gas, it may be possible to use, for example, adichlorosilane (SiH₂Cl₂, abbreviation: DCS) gas or a hexachlorodisilane(Si₂Cl₆: abbreviation: HCDS) gas.

As the F-containing gas, it may be possible to use, in addition to afluorine (F₂) gas, a nitrogen fluoride (NF₃) gas, a chlorine fluoride(ClF₃) gas and a hydrogen fluoride (HF) gas, for example, a gascontaining Si and F, such as a fluorosilane gas or the like. As thefluorosilane gas, it may be possible to use, for example, atetrafluorosilane (SiF₄) gas or a hexafluorodisilane (Si₂F₆) gas.

An inert gas, for example, an N₂ gas, is supplied from the gas supplypipes 232 c and 232 d into the process chamber 201 via the MFCs 241 cand 241 d, the valves 243 c and 243 d, the gas supply pipes 232 a and232 b, the nozzles 249 a and 249 b, and the buffer chamber 237.

In the case where the aforementioned first precursor is supplied fromthe gas supply pipe 232 a, a first precursor supply system as a firstsupply system is mainly configured by the gas supply pipe 232 a, the MFC241 a and the valve 243 a. The nozzle 249 a may be regarded as beingincluded in the first precursor supply system. The first precursorsupply system may be referred to as a first precursor gas supply system.In the case where an aminosilane precursor eras is supplied as the firstprecursor, the first supply system may be referred to as an aminosilaneprecursor gas supply system or an aminosilane precursor supply system.

In the case where the aforementioned second precursor is supplied fromthe gas supply pipe 232 a, a second precursor supply system as a secondsupply system is mainly configured by the gas supply pipe 232 a, the MFC241 a and the valve 243 a. The nozzle 249 a may be regarded as beingincluded in the second precursor supply system. The second precursorsupply system may be referred to as a second precursor gas supplysystem. In the case where a silicon hydride gas is supplied as thesecond precursor, the second supply system may be referred to as asilicon hydride gas supply system or a silicon hydride precursor supplysystem.

In the case where the aforementioned ligand desorption material issupplied from the gas supply pipe 232 a, a ligand desorption materialsupply system as a third supply system is mainly configured by the gassupply pipe 232 a, the MFC 241 a and the valve 243 a. The nozzle 249 amay be regarded as being included in the ligand desorption materialsupply system. Furthermore, in the case where the aforementioned liganddesorption material is supplied from the gas supply pipe 232 b, a liganddesorption material supply system as a third supply system is mainlyconfigured by the gas supply pipe 232 b, the MFC 241 b and the valve 243b. The nozzle 249 b and the buffer chamber 237 may be regarded as beingincluded in the ligand desorption material supply system. The liganddesorption material supply system may be referred to as a liganddesorption gas supply system.

Furthermore, an inert gas supply system is mainly configured by the gassupply pipes 232 c and 232 d, the MFCs 241 c and 241 d, and the valves243 c and 243 d.

As illustrated in FIG. 2, two rod-shaped electrodes 269 and 270 made ofa conductive material and having an elongated structure are disposedwithin the buffer chamber 237 so as to extend along the arrangementdirection of the wafers 200 from the lower portion of the reaction tube203 to the upper portion of the reaction tube 203. The respectiverod-shaped electrodes 269 and 270 are installed parallel to the nozzle249 b. Each of the respective rod-shaped electrodes 269 and 270 iscovered with and protected by an electrode protection tube 275 from thelower portion to the upper portion of rod-shaped electrodes 269 and 270.One of the rod-shaped electrodes 269 and 270 is connected to ahigh-frequency power source 273 via a matcher 272 and the other isconnected to a ground which is a reference potential. By applyingradio-frequency (RF) power from the high-frequency power source 273 tobetween the rod-shaped electrodes 269 and 270, plasma is generated in aplasma generation region 224 between the rod-shaped electrodes 269 and270. A plasma source as a plasma generator (plasma generation part) ismainly configured by the rod-shaped electrodes 269 and 270 and theelectrode protection tubes 275. The matcher 272 and the high-frequencypower source 273 may be regarded s being included in the plasma source.As will be described later, the plasma source functions as a plasmaexcitation part (activation mechanism) for plasma-exciting a gas, namelyexciting (or activating) a gas in a plasma state. Within the bufferchamber 237, an electric heating wire (hot wire) 237 h capable ofheating the buffer chamber 237 to an ultra-high temperature of, forexample, about 1,000 to 1,500 degrees C., may be installed as a gasactivation mechanism.

The electrode protection tubes 275 have a structure that enables therespective rod-shaped electrodes 269 and 270 to be inserted into thebuffer chamber 237 in a state in which the rod-shaped electrodes 269 and270 are isolated from the internal atmosphere of the buffer chamber 237.If an O concentration within the electrode protection tubes 275 issubstantially equal to an O concentration in the ambient air, therod-shaped electrodes 269 and 270 respectively inserted into theelectrode protection tubes 275 may be oxidized by the heat generatedfrom the heater 207. By filling an inert gas such as an N₂ gas or thelike into the electrode protection tubes 275, or by purging the interiorof the electrode protection tubes 275 with an inert gas such as an N₂gas or the like through the use of an inert gas purge mechanism, it ispossible to reduce the O concentration within the electrode protectiontubes 275 and to prevent the oxidation of the rod-shaped electrodes 269and 270.

An exhaust pipe 231 as an exhaust flow path configured to exhaust theinternal atmosphere of the process chamber 201 is installed in thereaction tube 203. A vacuum pump 246 as a vacuum exhaust device isconnected to the exhaust pipe 231 via a pressure sensor 245 as apressure detector (pressure detection part) which detects the internalpressure of the process chamber 201 and an auto pressure controller(APC) valve 244 as an exhaust valve (pressure regulation part). The APCvalve 244 is a valve configured so that the vacuum exhaust of theinterior of the process chamber 201 and the vacuum exhaust stop can beperformed by opening and closing the APC valve 243 while operating thevacuum pump 246 and so that the internal pressure of the process chamber201 can be adjusted by adjusting the opening degree of the APC valve 243based on the pressure information detected by the pressure sensor 245while operating the vacuum pump 246. An exhaust system is mainlyconfigured by the exhaust pipe 231, the APC valve 244 and the pressuresensor 245. The vacuum pump 246 may be regarded as being included in theexhaust system. The exhaust pipe 231 is not limited to being installedin the reaction tube 203 but may be installed in the manifold 209 justlike the nozzles 249 a and 249 b.

A seal cap 219, which serves as a furnace opening cover configured tohermetically seal a lower end opening of the manifold 209, is installedunder the manifold 209. The seal cap 219 is configured to make contactwith the lower end of the manifold 209 at a lower side in the verticaldirection. The seal cap 219 is made of metal such as, e.g., stainlesssteel or the like, and is formed in a disc shape. An O-ring 220 b, whichis a seal member making contact with the lower end portion of themanifold 209, is installed on an upper surface of the seal cap 219. Arotation mechanism 267 configured to rotate a boat 217, which will bedescribed later, is installed at the opposite side of the seal cap 219from the process chamber 201. A rotary shaft 255 of the rotationmechanism 267, which penetrates the seal cap 219, is connected to theboat 217. The rotation mechanism 267 is configured to rotate the wafers200 by rotating the boat 217. The seal cap 219 is configured to bevertically moved up and down by a boat elevator 115 which is an elevatormechanism vertically installed outside the reaction tube 203. The boatelevator 215 is configured to load and unload the boat 217 into and fromthe process chamber 201 by moving the seal cap 219 up and down. The boatelevator 115 is configured as a transfer device (transfer mechanism)which transfers the boat 217, i.e., the wafers 200, into and out of theprocess chamber 201. Furthermore, a shutter 219 s as a furnace openingcover capable of hermetically seal the lower end opening of the manifold209 while moving the seal cap 219 down with the boat elevator 115 isinstalled under the manifold 209. The shutter 219 s is made of metalsuch as, e.g., stainless steel or the like, and is formed in a discshape. An O-ring 220 c as a seal member making contact with the lowerend portion of the manifold 209 is installed on an upper surface of theshutter 219 s. An opening/closing operation (an up-down movementoperation or a rotational movement operation) of the shutter 219 s iscontrolled by a shutter opening/closing mechanism 115 s.

The boat 217 serving as a substrate support is configured to support aplurality of wafers 200, e.g., 25 to 200 wafers, in such a state thatthe wafers 200 are arranged in a horizontal posture and in multiplestages along a vertical direction with the centers of the wafers 200aligned with one another. That is, the boat 217 is configured to arrangethe wafers 200 in a spaced-apart relationship. The boat 217 is made of aheat resistant material such as quartz or SiC. Heat insulating plates218 made of a heat resistant material such as quartz or SiC areinstalled below the boat 217 in multiple stages. With thisconfiguration, it is hard for heat generated from the heater 207 to betransferred to the seal cap 219. However, the present embodiment is notlimited to this configuration. For example, instead of installing theheat insulating plates 218 below the boat 217, a heat insulating tube asa tubular member made of a heat resistant material such as quartz or SiCmay be installed under the boat 217.

A temperature sensor 263 serving as a temperature detector is installedin the reaction tube 203. Based on temperature information detected bythe temperature sensor 263, a state of supplying electric power to theheater 207 is adjusted such that the interior of the process chamber 201has a desired temperature distribution. Similar to the nozzles 249 a and249 b, the temperature sensor 263 is formed in an L shape. Thetemperature sensor 263 is installed along the inner wall of the reactiontube 203.

As illustrated in FIG. 3, a controller 121, which is a control part(control means), may be configured as a computer including a centralprocessing unit (CPU) 121 a, a random access memory (RAM) 121 b, amemory device 121 c, and an I/O port 121 d. The RAM 121 b, the memorydevice 121 c and the I/O port 121 d are configured to exchange data withthe CPU 121 a via an internal bus 121 e. An input/output device 122formed of, e.g., a touch panel or the like, is connected to thecontroller 121.

The memory device 121 c is configured by, for example, a flash memory, ahard disc drive (HDD), or the like. A control program for controllingoperations of a substrate processing apparatus, a process recipe forspecifying sequences and conditions of a film forming process asdescribed hereinbelow, or the like is readably stored in the memorydevice 121 c. The process recipe functions as a program for causing thecontroller 121 to execute each sequence in the film forming process, asdescribed hereinbelow, to obtain a predetermined result. Hereinafter,the process recipe and the control program will be generally and simplyreferred to as a “program”. Furthermore, the process recipe will besimply referred to as a “recipe”. When the term “program” is usedherein, it may indicate a case of including only the recipe, a case ofincluding only the control program, or a case of including both therecipe and the control program. The RAM 121 b is configured as a memoryarea (work area) in which a program or data read by the CPU 121 a istemporarily stored.

The I/O port 121 d is connected to the MFCs 241 a to 241 d, the valves243 a to 243 d, the pressure sensor 245, the APC valve 244, the vacuumpump 246, the temperature sensor 263, the heater 207, the rotationmechanism 267, the boat elevator 115, the shutter opening/closingmechanism 115 s, the matcher 272, the high-frequency power source 273,the hot wire 237 h, and the like.

The CPU 121 a is configured to read the control program from the memorydevice 121 c and execute the same. The CPU 121 a also reads the recipefrom the memory device 121 c according to an input of an operationcommand from the input/output device 122. In addition, the CPU 121 a isconfigured to control, according to the contents of the recipe thusread, the flow rate adjusting operation of various kinds of gases by theMFCs 241 a to 241 d, the opening/closing operation of the valves 243 ato 243 d, the opening/closing operation of the APC valve 244, thepressure regulating operation performed by the APC valve 244 based onthe pressure sensor 245, the driving and stopping of the vacuum pump246, the temperature adjusting operation performed by the heater 207based on the temperature sensor 263, the operation of rotating the boat217 with the rotation mechanism 267 and adjusting the rotation speed ofthe boat 217, the operation of moving the boat 217 up and down with theboat elevator 115, the operation of opening and closing the shutter 219s with the shutter opening/closing mechanism 115 s, the impedanceadjustment operation using the matcher 272, the power supply to thehigh-frequency power source 273 and the hot wire 237 h, and the like.

The controller 121 may be configured by installing, on the computer, theaforementioned program stored in an external memory device 123 (forexample, a magnetic tape, a magnetic disc such as a flexible disc or ahard disc, an optical disc such as a CD or DVD, a magneto-optical discsuch as an MO, a semiconductor memory such as a USB memory or a memorycard). The memory device 121 c or the external memory device 123 isconfigured as a non-transitory computer-readable recording medium.Hereinafter, the memory device 121 c and the external memory device 123will be generally and simply referred to as a “recording medium.” Whenthe term “recording medium” is used herein, it may indicate a case ofincluding only the memory device 121 c, a case of including only theexternal memory device 123, or a case of including both the memorydevice 121 c and the external memory device 123. Furthermore, theprogram may be supplied to the computer using communication means suchas the Internet or a dedicated line, instead of using the externalmemory device 123.

(2) Substrate Processing

A sequence example of forming a film on a substrate using theaforementioned substrate processing apparatus, which is one of theprocesses for manufacturing a semiconductor device, will be describedbelow with reference to FIG. 4. In the following descriptions, theoperations of the respective parts constituting the substrate processingapparatus are controlled by the controller 121.

In the film forming sequence illustrated in FIG. 4, there are performed:a seed layer foaming step of forming a Si-containing seed layer (Si seedlayer) on a wafer 200 by alternately performing, a predetermined numberof times (n times), a step of supplying a DIPAS gas as a first precursorto the wafer 200 as a substrate to form an adsorption layer of DIPAS anda step of supplying a plasma-excited H₂ gas (hereinafter also referredto as a H₂* gas) as a ligand desorption material to the wafer 200 todesorb an amino ligand from the adsorption layer of DIPAS; and a CVDfilm forming step of supplying a SiH₄ gas as a second precursor to thewafer 200 to form a silicon film (CVD-Si film) as a Si-containing filmon the seed layer.

In the present disclosure, for the sake of convenience, the sequence ofthe film forming process illustrated in FIG. 4 may sometimes be denotedas follows. The same denotation will be used in the modifications andother embodiments as described hereinbelow.(DIPAS→H₂*)×n→SiH₄

Si

When the term “wafer” is used herein, it may refer to “a wafer itself”or “a laminated body (aggregate) of a wafer and a predetermined layer orfilm formed on the surface of the wafer”. That is, a wafer including apredetermined layer or film formed on its surface may be referred to asa wafer. In addition, when the phrase “a surface of a wafer” is usedherein, it may refer to “a surface (exposed surface) of a wafer itself”or “a surface of a predetermined layer or film formed on a wafer, namelyan uppermost surface of the wafer as a laminated body”.

Accordingly, in the present disclosure, the expression “a predeterminedgas is supplied to a wafer” may mean that “a predetermined gas isdirectly supplied to a surface (exposed surface) of a wafer itself” orthat “a predetermined gas is supplied to a layer or film formed on awafer, namely to an uppermost surface of a wafer as a laminated body.”Furthermore, in the present disclosure, the expression “a predeterminedlayer (or film) is formed on a wafer” may mean that “a predeterminedlayer (or film) is directly formed on a surface (exposed surface) of awafer itself” or that “a predetermined layer (or film) is formed on alayer or film formed on a wafer, namely on an uppermost surface of awafer as a laminated body.”

In addition, when the term “substrate” is used herein, it may besynonymous with the term “wafer.”

(Loading Step)

If a plurality of wafers 200 is charged on the boat 217 (wafercharging), the shutter 219 s is moved by the shutter opening/closingmechanism 115 s to open the lower end opening of the manifold 209(shutter opening). Thereafter, as illustrated in FIG. 1A, the boat 217supporting the plurality of wafers 200 is lifted up by the boat elevator115 and is loaded into the process chamber 201 (boat loading). In thisstate, the seal cap 219 seals the lower end of the manifold 209 throughthe O-ring 220 b.

As an insulation film, a SiO film, which is an oxide film, is formed inadvance on at least a portion of the surface of the wafer 200. This filmbecomes at least a portion of a base film of the seed layer at the seedlayer forming step which will be described later. This film may beformed so as to cover the entire surface of the wafer 200 or may beformed so as to cover only a portion of the surface of the wafer 200. Inaddition to the oxide film, a nitride film, an oxynitride film, anoxycarbonitride film, an oxycarbide film; a carbonitride film, aborocarbonitride film, a boronitride film or the like may be formed asthe insulation film. That is, in addition to the SiO film, for example,a Si-containing film such as a silicon nitride film (SiN film), asilicon oxynitride film (SiON film), a silicon oxycarbonitride film(SiOCN film), a silicon oxycarbide film (SiOC film), a siliconcarbonitride film (SiCN film), a silicon borocarbonitride film (SiBCNfilm), a silicon boronitride film (SiBN film) or the like may be formedas the insulation film. Furthermore, a metal oxide film such as analuminum oxide film (AlO film), a hafnium oxide film (HfO film), azirconium oxide film (ZrO film), a titanium oxide film MO film) or thelike, namely a high-dielectric-constant insulation film (high-k film),may be formed as the insulation film. That is, the insulation film maybe a high-k film such as an HfO film, a ZrO film or the like, or may bea low-k film such as a SiOCN film, a SiOC film, a SiBN film, a SiBCNfilm or the like. The insulation film referred to herein includes notonly a film intentionally formed by performing a specified process suchas, e.g., a CVD process, a plasma CVD process, a thermal oxidizingprocess, a thermal nitriding process, a plasma oxidizing process, aplasma nitriding process or the like, but also a natural oxide filmnaturally formed as the surface of the wafer 200 is exposed to the airduring the transfer of the wafer 200. In addition to the aforementionedinsulation film, a conductor film (metal film) such as an aluminum film(Al film), a tungsten film (W film), a titanium nitride film (TiN film)or the like, or a semiconductor film such as a polysilicon film (poly-Sifilm) or the like, may be formed on at least a portion of the surface ofthe wafer 200.

(Pressure Regulation and Temperature Adjustment Step)

The interior of the process chamber 201, namely the space in which thewafers 200 are located, is vacuum-exhausted (depressurization-exhausted)by the vacuum pump 246 so as to reach a desired pressure (degree ofvacuum). In this operation, the internal pressure of the process chamber201 is measured by the pressure sensor 245. The APC valve 244 isfeedback-controlled based on the measured pressure information. Thevacuum pump 246 may be continuously activated at least until theprocessing of the wafers 200 is completed. The wafers 200 in the processchamber 201 are heated by the heater 207 to a desired temperature (afirst temperature as described hereinbelow). In this operation, thestate of supplying electric power to the heater 207 isfeedback-controlled based on the temperature information detected by thetemperature sensor 263 such that the interior of the process chamber 201has a desired temperature distribution. In addition, the heating of theinterior of the process chamber 201 by the heater 207 may becontinuously performed at least until the processing of the wafers 200is completed. The rotation of the boat 217 and the wafers 200 by therotation mechanism 267 begins. The rotation of the boat 217 and thewafers 200 by the rotation mechanism 267 may be continuously performedat least until the processing of the wafers 200 is completed.

(Seed Layer Forming Step)

Next, the following two steps, i.e., steps 1 and 2, are sequentiallyperformed.

[Step 1]

At this step, a DIPAS gas is supplied to the wafer 200 accommodatedwithin the process chamber 201.

Specifically, the valve 243 a is opened to allow a DIPAS gas to flowthrough the gas supply pipe 232 a. The flow rate of the DIPAS gas isadjusted by the MFC 241 a. The DIPAS gas is supplied into the processchamber 201 via the nozzle 249 a and is exhausted from the exhaust pipe231. At this time, the DIPAS gas is supplied to the wafer 200.Simultaneously, the valve 243 c is opened to allow an N₂ gas to flowthrough the gas supply pipe 232 c. The flow rate of the N₂ gas isadjusted by the MFC 241 c. The N₂ gas is supplied into the processchamber 201 together with the DIPAS gas and is exhausted from theexhaust pipe 231. Furthermore, in order to prevent the DIPAS gas fromentering the buffer chamber 237 and the nozzle 249 b, the valve 243 d isopened to allow the N₂ gas to flow through the gas supply pipe 232 d.The N₂ gas is supplied into the process chamber 201 via the gas supplypipe 232 b, the nozzle 249 b and the buffer chamber 237 and is exhaustedfrom the exhaust pipe 231.

The supply flow rate of the DIPAS gas controlled by the MFC 241 a may beset at a flow rate which falls within a range of, for example, 10 to1,000 sccm, specifically 10 to 500 sccm. The supply flow rates of the N₂gas controlled by the MFCs 241 c and 241 d may be respectively set at aflow rate which falls within a range of, for example, 100 to 10,000sccm. The internal pressure of the process chamber 201 may be set at apressure which falls within a range of, for example, 1 to 2,666 Pa,specifically 67 to 1,333 Pa. The time period, during which the DIPAS gasis supplied to the wafer 200, namely the gas supply time period (theirradiation time period), may be set at a time period which falls withina range of, for example, 1 to 180 seconds, specifically 1 to 120seconds, more specifically 1 to 60 seconds.

The temperature of the heater 207 is set such that the temperature ofthe wafer 200 (first temperature) becomes a temperature which fallswithin a range of, for example, a room temperature (25 degrees C.) to500 degrees C., specifically 200 to 450 degrees C., more specifically300 to 400 degrees C.

If the first temperature is lower than the room temperature, the standbytime required until the internal temperature of the process chamber 201is elevated to and stabilized at a predetermined processing temperature(second temperature) may be prolonged when the CVD film forming step asdescribed hereinbelow is performed after the seed layer forming step. Asa result, the productivity of substrate processing may be decreased. Bysetting the first temperature to become higher than the roomtemperature, it is possible to sufficiently shorten the aforementionedstandby time and to sufficiently increase the productivity of substrateprocessing. By setting the first temperature to become 200 degrees C. orhigher, it is possible to further shorten the aforementioned standbytime and to further increase the productivity of substrate processing.By setting the first temperature to become 300 degrees C. or higher, itis possible to even further shorten the aforementioned standby time andto even further increase the productivity of substrate processing.

If the first temperature exceeds 500 degrees C., DIPAS supplied into theprocess chamber 201 is easily pyrolyzed and an adsorption layer of DIPASis difficult to be formed on the wafer 200. Furthermore, an excessivegas phase reaction occurs within the process chamber 201. Thus, theremay be a case where an extraneous material is generated within theprocess chamber 201. By setting the first temperature at 500 degrees C.or lower, it is possible to suppress the pyrolysis of DIPAS or thegeneration of an extraneous material. By setting the first temperatureat 450 degrees C. or lower, it is possible to sufficiently avoid thepyrolysis of DIPAS or the generation of an extraneous material. Bysetting the first temperature at 400 degrees C. or lower, it is possibleto reliably avoid the pyrolysis of DIPAS or the generation of anextraneous material.

Accordingly, it is desirable that the temperature of the wafer 200(first temperature) be set at a temperature which falls within a rangeof for example, a room temperature (25 degrees C.) to 500 degrees C.,specifically 200 to 450 degrees C., more specifically 300 to 400 degreesC.

The aforementioned condition is a condition under which DIPAS is notpyrolyzed (autolyzed) if DIPAS exists alone within the process chamber201. By supplying the DIPAS gas to the wafer 200 under this condition,it is possible to moderately suppress the pyrolysis of DIPAS and tocause DIPAS to be physically adsorbed or chemisorbed onto the surface ofthe wafer 200. As a result, an adsorption layer (molecular layer) ofDIPAS is formed on the wafer 200. At this time, at least some of S—Nbonds of DIPAS adsorbed onto the wafer 200 are held (maintained) withoutbeing broken and are directly introduced into the adsorption layer ofDIPAS. That is, at least some of amino ligands of DIPAS remain withinthe adsorption layer of DIPAS.

If the thickness of the adsorption layer of DIPAS formed on the wafer200 exceeds several molecular layers, a modifying action (amino liganddesorbing action) at step 2 as described hereinbelow fails to reach theentirety of the adsorption layer. A minimum value of the thickness ofthe adsorption layer of DIPAS which can be formed on the wafer 200 isless than one molecular layer. Accordingly, it is desirable that thethickness of the adsorption layer of DIPAS be approximately from lessthan one molecular layer to several molecular layers. In this regard,the layer having a thickness of less than one molecular layer refers toa molecular layer formed discontinuously. The layer having a thicknessof one molecular layer refers to a molecular layer formed continuously.By setting the thickness of the adsorption layer of DIPAS at onemolecular layer or less, namely one molecular layer or less than onemolecular layer, it is possible to relatively increase the modifyingaction at step 2, which will be described later, and to shorten the timerequired in modifying the adsorption layer at step 2. Furthermore, it ispossible to shorten the time required in forming the adsorption layer ofDIPAS at step 1. As a result, it is possible to shorten the processingtime per one cycle and to shorten the processing time required at theseed layer forming step. By setting the thickness of the adsorptionlayer of DIPAS at one molecular layer or less, it is possible to enhancethe controllability of the film thickness uniformity of a seed layer.

After the adsorption layer of DIPAS is formed, the valve 243 a is closedto stop supplying the DIPAS gas into the process chamber 201. At thistime, the interior of the process chamber 201 is vacuum-exhausted by thevacuum pump 246 while opening the APC valve 244. Thus, the unreactedDIPAS gas, the DIPAS gas contributed to the formation of the adsorptionlayer of DIPAS, or the reaction byproduct, which remains within theprocess chamber 201, is removed from the interior of the process chamber201. Furthermore, the supply of the N₂ gas into the process chamber 201is maintained while opening the valves 243 c and 243 d. The N₂ gas actsas a purge gas. This makes it possible to enhance the effect of removingthe unreacted DIPAS gas or the DIPAS gas contributed to the formation ofthe adsorption layer of DIPAS, which remains within the process chamber201, from the interior of the process chamber 201.

At this time, the gas remaining within the process chamber 201 may notbe completely removed and the interior of the process chamber 201 maynot be completely purged. If the amount of the gas remaining within theprocess chamber 201 is small, there is no possibility that an adverseeffect is generated at step 2 which will be performed later. In thiscase, it is not necessary to make large the flow rate of the N₂ gassupplied into the process chamber 201. For example, by supplying the N₂gas substantially in the same amount as the volume of the reaction tube203 (the process chamber 201), it is possible to perform a purgeoperation such that an adverse effect is not generated at step 2. By notcompletely purging the interior of the process chamber 201 in this way,it is possible to shorten the purge time and to improve the throughput.In addition, it is possible to suppress the consumption of the N₂ gas toa necessary minimum level.

As the first precursor, it may be possible to use, in addition to theDIPAS gas, various kinds of aminosilane precursor gases such as abis-diethylaminosilane (SiH₂[N(C₂H₅)₂]₂, abbreviation: BDEAS) gas, abis-tert-butylaminosilane (SiH₂[NH(C₄H₉)]₂, abbreviation: BTBAS) gas, abis-diethylpiperidinosilane (SiH₂[NC₅H₈(C₂H₅)₂]₂, abbreviation: BDEPS)gas, a tris-diethylaminosilane (SiH[N(C₂H₅)₂]₃, abbreviation: 3DEAS)gas, a tris-dimethylaminosilane (SiH[N(CH₃)₂]₃, abbreviation: 3DMAS)gas, a tetrakis-dimethylaminosilane (Si[N(CH₃)₂]4, abbreviation: 4DMAS)gas, a tetrakis-diethylaminosilane (Si[N(C₂H₅)₂]₄, abbreviation: 4DEAS)gas, a tetraethoxysilane (Si(OC₂H₅)₄, abbreviation: TEOS) gas, ahexamethyldisilazane ((CH₃)₃Si—NH—Si(CH₃)₃, abbreviation: HMDS) gas orthe like.

As the inert gas, it may be possible to use, in addition to the N₂ gas,a rare gas such as an Ar gas, a He gas, a Ne gas, a Xe gas or the like.

[Step 2]

After the adsorption layer of DIPAS is formed on the wafer 200, aplasma-excited H₂ gas is supplied to the wafer 200 accommodated withinthe process chamber 201.

Specifically, the opening/closing control of the valves 243 b to 243 dis performed in the same procedure as the opening/closing control of thevalves 243 a, 243 c and 243 d at step 1. Furthermore, high-frequencypower (RF power) (hereinafter simply referred to as electric power) issupplied to between the rod-shaped electrodes 269 and 270, whereby theH₂ gas supplied into the buffer chamber 237 is activated by plasma(plasma-excited). The plasma-excited H₂ gas (H₂* gas) is supplied fromthe buffer chamber 237 into the process chamber 201 and is exhaustedfrom the exhaust pipe 231. At this time, the H₂* gas is supplied to thewafer 200.

The supply flow rate of the H₂ gas controlled by the MFC 241 b may beset at a flow rate which falls within a range of, for example, 100 to10,000 sccm. The supply flow rates of the N₂ gas controlled by the MFCs241 c and 241 d may be respectively set at a flow rate which fallswithin a range of, for example, 100 to 10,000 sccm. The high-frequencypower (RF power) (hereinafter simply referred to as electric power)applied to between the rod-shaped electrodes 269 and 270 may be set atelectric power which falls within a range of, for example, 50 to 1,000W. The internal pressure of the process chamber 201 may be set at apressure which falls within a range of, for example, 1 to 100 Pa. Thepartial pressure of the H₂ gas within the process chamber 201 may be setat a pressure which falls within a range of, for example, 0.01 to 100Pa. The time period, during which active species (H₂* or H*) obtained byplasma-exciting the H₂ gas are supplied to the wafer 200, namely the gassupply time period (irradiation time period), may be set at a timeperiod which falls within a range of, for example, 1 to 120 seconds,specifically 1 to 60 seconds. Other processing conditions may be similarto the processing conditions of step 1 described above.

By supplying the H₂* gas to the wafer 200 under the aforementionedconditions, Si—N bonds contained in DIPAS adsorbed onto the surface ofthe wafer 200 can be broken by the high energy possessed by the H₂* gas.That is, the bonds between Si contained in the adsorption layer of DIPASand amino ligands bonded to Si can be broken by the action of the H₂*gas. This makes it possible to desorb the amino ligands from theadsorption layer of DIPAS. At least some of Si atoms, which havedangling bonds due to the removal of the amino ligands, form Si—Sibonds. As a result, the adsorption layer of DIPAS formed on the wafer200 is modified into a silicon layer (Si layer) having a thickness offrom less than one atomic layer to several atomic layers. In thisregard, the layer having a thickness of less than one atomic layerrefers to an atomic layer formed discontinuously. The layer having athickness of one atomic layer refers to an atomic layer formedcontinuously. The Si layer formed at step 2 becomes a layer which islower in N concentration or C concentration than the adsorption layer ofDIPAS formed at step 1.

After the adsorption layer of DIPAS is modified to the Si layer, thevalve 243 b is closed to stop supplying the H₂ gas. Furthermore, thesupply of the electric power to between the rod-shaped electrodes 269and 270 is stopped. The H₂ gas or the reaction byproduct, which remainswithin the process chamber 201, is removed from the interior of theprocess chamber 201 under the same processing procedures and processingconditions as those of step 1. At this time, similar to step 1, the H₂gas or the like remaining within the process chamber 201 may not becompletely discharged.

As the ligand desorption material, in addition to the H₂ gas, a D₂ gasmay be used by plasma-exciting the same. Moreover, an N₂ gas or theaforementioned various kinds of rare gases may be used byplasma-exciting the same.

As the inert gas, it may be possible to use, in addition to the N₂ gas,for example, various kinds of rare gases mentioned above.

[Performing a Predetermined Number of Times]

A cycle which non-simultaneously, i.e., non-synchronously, performssteps 1 and 2 described above is implemented a predetermined number oftimes (n times), namely once or more. Thus, a seed layer (Si seed layer)having a predetermined thickness can be formed on the wafer 200. Theaforementioned cycle may be repeated multiple times. That is, thethickness of the Si layer formed per one cycle may be set smaller than adesired thickness and the aforementioned cycle may be repeated multipletimes until the thickness of the seed layer formed by laminating the Silayer becomes equal to the desired thickness. For example, the Si layerhaving a thickness of less than one atomic layer may be formed per onecycle and the seed layer having a thickness of one atomic layer or moreand several atomic layers or less may be formed by performing the cyclemultiple times. In order to uniformly shorten the growth delay time(incubation time) over the entire in-plane region of the wafer 200 atthe CVD film forming step which will be described later, it is desirablethat the seed layer be formed into a continuous layer, namely that thethickness of the seed layer be one atomic layer or more. The thicknessof the seed layer may be set at a thickness which falls within a rangeof, for example, 1 to 50 Å (0.1 to 5 nm), specifically 1 to 20 Å (0.1 to2 nm), more specifically 1 to 10 Å (0.1 to 1 nm).

(CVD Film Forming Step)

After the seed layer is formed, a SiH4 gas is supplied to the wafer 200accommodated within the process chamber 201.

Specifically, the opening/closing control of the valves 243 a, 243 c and243 d is performed in the same procedure as the opening/closing controlof the valves 243 a, 243 c and 243 d at step 1. The flow rate of theSiH₄ gas flowing through the gas supply pipe 232 a is controlled by theMFC 241 a. The SiH₄ gas is supplied into the process chamber 201 via thenozzle 249 a and is exhausted from the exhaust pipe 231. At this time,the SiH₄ gas is supplied to the wafer 200.

The supply flow rate of the SiH₄ gas controlled by the MFC 241 a may beset at a flow rate which falls within a range of, for example, 10 to2,000 sccm, specifically 500 to 1,000 sccm. The supply flow rates of theN₂ gas controlled by the MFCs 241 c and 241 d may be respectively set ata flow rate which falls within a range of, for example, 100 to 10,000seem. The internal pressure of the process chamber 201 may be set at apressure which falls within a range of, for example, 1 to 1333 Pa,specifically 1 to 133 Pa. The time period, during which the SiH₄ gas issupplied to the wafer 200, namely the gas supply time period(irradiation time period), may be appropriately decided depending on thethickness of the Si film formed on the seed layer, or the like.

The temperature of the heater 207 is set such that the temperature ofthe wafer 200 becomes a temperature (second temperature) equal to orhigher than the first temperature mentioned above. The secondtemperature is a temperature equal to or higher than the firsttemperature mentioned above and may be set at a temperature which fallswithin a range of, for example, 450 to 650 degrees C., specifically 500to 550 degrees C.

If the second temperature is lower than 450 degrees C., there may a casewhere the pyrolysis of SiH₄ is difficult to occur (the gas phasereaction is difficult to occur) and the formation process of a Si film(the CVD film forming process) is difficult to go ahead. By setting thesecond temperature at 450 degrees C. or higher, it is possible toappropriately generate the gas phase reaction and to reliably performthe CVD film forming process. By setting the second temperature at 500degrees C. or higher, it is possible to appropriately generate the gasphase reaction and to more reliably perform the CVD film formingprocess.

If the second temperature exceeds 650 degrees C., an excessive gas phasereaction may occur. Thus, the film thickness uniformity is likely to bedeteriorated and the control of the film thickness uniformity isdifficult. Furthermore, there may be a case where an extraneous materialis generated within the process chamber 201 and the reduction of asubstrate processing quality is incurred. By setting the secondtemperature at 650 degrees C. or lower, it is possible to suppress thedeterioration of the film thickness uniformity while generating amoderate gas phase reaction and to suppress the generation of anextraneous material within the process chamber 201. By setting thesecond temperature at 550 degrees C. or lower, it is easy to secure thefilm thickness uniformity of the Si film and it is possible to reliablysuppress the generation of an extraneous material within the processchamber 201.

Accordingly, it is desirable that the temperature of the wafer 200 (thesecond temperature) be set at a temperature which falls within a rangeof, for example, 450 to 650 degrees C., specifically 500 to 550 degreesC.

The aforementioned condition is a condition under which SiH₄ ispyrolyzed (autolyzed) if SiH₄ exists alone within the process chamber201. By supplying the SiH₄ gas to the wafer 200 under this condition, Sicontained in SiH₄ is deposited on the seed layer and a Si film (CVD-Sifilm) having a predetermined film thickness is formed on the seed layer.Thus, there is formed a laminated film (Si film) which is obtained bylaminating the seed layer and the CVD-Si film on the wafer 200. The filmthickness of the CVD-Si film growing at the CVD film forming step isappropriately decided depending on the specifications of a device formedon the wafer 200, or the like and may be set at, for example, 1 to 5,000Å. In the case where the temperature of the wafer 200 is set at atemperature which falls within a range of 450 to 520 degrees C., theCVD-Si film has a strong tendency to become an amorphous Si film.Furthermore, in the case where the temperature of the wafer 200 is setat a temperature which falls within a range of 520 to 530 degrees C.,the CVD-Si film has a strong tendency to become a Si film in whichamorphous and polycrystal are mixed with each other. Moreover, in thecase where the temperature of the wafer 200 is set at a temperaturewhich falls within a range of 530 to 650 degrees C., the CVD-Si film hasa strong tendency to become a poly-Si film.

As the second precursor, it may be possible to suitably use, in additionto the SiH₄ gas, a halogen-element-free silicon hydride gas such as aSi₂H₆ gas, a Si₃H₈ gas or the like. Furthermore, as the secondprecursor, it may be possible to suitably use ahalogen-element-containing silane precursor gas (halosilane precursorgas) such as a monochiorosilane (SiH₃Cl, abbreviation: MCS) gas, adichlorosilane (SiH₂Cl₂, abbreviation: DCS) gas, a trichlorosilane(SiHCl₃, abbreviation: TCS) gas, a tetrachlorosilane, i.e., silicontetrachloride (SiCl₄, abbreviation: STC) gas, a hexachlorodisilane(Si₂Cl₆, abbreviation: HCDS) gas or the like. From the viewpoint ofpreventing a halogen element from being mixed into the CVD-Si film, itis desirable that a halogen-element-free silicon hydride gas be used asthe second precursor. Furthermore, from the viewpoint of enhancing thedeposition rate of the Si film, it is desirable that a halosilaneprecursor gas higher in reactivity than the silicon hydride gas be usedas the second precursor.

As the inert gas, it may be possible to use, in addition to the N₂ gas,for example, various kinds of rare gases mentioned above.

After the CVD-Si film having a desired thickness is formed, the valve243 a is closed to stop the supply of the SiH₄ gas into the processchamber 201. Then, the unreacted gas, the gas contributed to theaforementioned reaction, or the reaction byproduct, which remains withinthe process chamber 201, is removed from the interior of the processchamber 201 according to the same processing procedures as those of step1 described above. At this time, similar to step 1, the gas or the likeremaining within the process chamber 201 may not be completely removed.

(Atmospheric Pressure Return Step)

After the formation of the CVD-Si film is completed, the N₂ gas issupplied from the gas supply pipes 232 c and 232 d into the processchamber 201 and is exhausted from the exhaust pipe 231. The N₂ gas actsas a purge gas. Thus, the interior of the process chamber 201 is purgedand the gas or the reaction byproduct, which remains within the processchamber 201, is removed from the interior of the process chamber 201(purge). Thereafter, the internal atmosphere of the process chamber 201is substituted by an inert gas (inert gas substitution). The internalpressure of the process chamber 201 is returned to an atmosphericpressure (atmospheric pressure return).

(Unloading Step)

Thereafter, the seal cap 219 is moved down by the boat elevator 115 toopen the lower end of the manifold 209. The processed wafers 200supported on the boat 217 are unloaded from the lower end of themanifold 209 to the outside of the reaction tube 203 (boat unloading).After the boat unloading, the shutter 219 s is moved so that the lowerend opening of the manifold 209 is sealed by the shutter 219 s throughthe O-ring 220 c (shutter closing). The processed wafers 200 areunloaded to the outside of the reaction tube 203 and are subsequentlydischarged from the boat 217 (wafer discharging).

(3) Effects According to the Present Embodiment

According to the present embodiment, one or more effects as set forthbelow may be achieved.

(a) By forming the seed layer on the wafer 200 in advance, it ispossible to shorten the incubation time of the CVD-Si film formed on theseed layer. Furthermore, forming the seed layer as a continuous layerallows the growth start timings of the CVD-Si film to be uniform overthe entire in-plane region of the wafer 200. This makes it possible toimprove the film thickness uniformity of the CVD-Si film in the plane ofthe wafer 200.

(b) If the formation of the seed layer is implemented under theaforementioned processing condition, namely under the condition(temperature or pressure) in which DIPAS is not pyrolyzed if DIPASexists alone within the process chamber 201, there may be a case wherean impurity such as N or C contained in the amino ligands of DIPAS isintroduced into the seed layer. In contrast, at the seed layer formingstep of the present embodiment, the plasma-excited H₂ gas is supplied tothe adsorption layer of DIPAS formed on the wafer 200. It is thereforepossible to desorb the amino ligands from the adsorption layer of DIPASand to significantly reduce an N concentration or a C concentration inthe seed layer. As a result, the Si film obtained by laminating the seedlayer and the CVD-Si film can be allowed to become a high-quality filmwhich is low in the concentration of an impurity such as N or C.

(c) At the seed layer forming step, the H₂ gas, which is a material notcontaining N and C, is used as the ligand desorption material. Thismakes it possible to prevent an N component or a C component from beingadded to the seed layer due to the execution of step 2. As a result, theSi film obtained by laminating the seed layer and the CVD-Si film can beallowed to become a high-quality film which is extremely low in theconcentration of an impurity such as N or C.

(d) At the seed layer forming step, step 1 of supplying the DIPAS gas tothe wafer 200 and step 2 of supplying the plasma-excited H₂ gas to thewafer 200 are non-simultaneously and alternately performed. That is,step 2 of supplying the H₂ gas is performed after the adsorption layerof DIPAS is formed (after DIPAS is adsorbed onto the surface of thewafer 200). This makes it possible to prevent the occurrence of anexcessive gas phase reaction within the process chamber 201, to suppressthe generation of an extraneous material within the process chamber 201,and to improve a substrate processing quality.

(e) At the CVD film forming step, the amino-ligand-free SiH₄ gas is usedas the second precursor. This makes it possible to prevent an Ncomponent or a C component from being added into the CVD-Si film. As aresult, the Si film obtained by laminating the seed layer and the CVD-Sifilm can be allowed to become a high-quality film which is extremely lowin the concentration of an impurity such as N or C.

(f) The effects mentioned above can be similarly achieved in the casewhere an aminosilane precursor gas other than the DIPAS gas is used asthe first precursor, or in the case where a reducing gas other than theplasma-excited H₂ gas is used as the ligand desorption material, or inthe case where a silane precursor gas other than the SiH₄ gas is used asthe second precursor.

(4) Exemplary Modifications

The substrate processing sequence of the present embodiment is notlimited to the one illustrated in FIG. 4 but may be modified as in themodifications described below.

Modification 1

At step 1 which is the seed layer forming step, the DIPAS gas may beexhausted from the interior of the process chamber 201 while supplyingthe DIPAS gas into the process chamber 201. At this time, the supplyflow rate (supply rate) of the DIPAS gas supplied into the processchamber 201 may be set higher than the exhaust flow rate (exhaust rate)of the DIPAS gas exhausted from the interior of the process chamber 201.For example, a state in which the exhaust system is substantiallyclosed, namely a state in which the DIPAS gas is substantially confinedwithin the process chamber 201, may be created by slightly opening theAPC valve 244 (reducing the opening degree of the APC valve 244) whenthe DIPAS gas is supplied into the process chamber 201. Moreover, thisstate may be maintained for a predetermined period of time.

Furthermore, at step 1 which is the seed layer forming step, the DIPASgas may be confined within the process chamber 201 by stopping theexhaust of the DIPAS gas from the interior of the process chamber 201when the DIPAS gas is supplied into the process chamber 201. Forexample, a state in which the exhaust system is completely closed,namely a state in which the DIPAS gas is completely confined within theprocess chamber 201, may be created by completely closing the APC valve244 when the DIPAS gas is supplied into the process chamber 201.Moreover, this state may be maintained for a predetermined period oftime.

In the present disclosure, for the sake of convenience, the state inwhich the exhaust system is substantially closed by slightly opening theAPC valve 244, or the state in which the exhaust system is completelyclosed by completely closing the APC valve 244, will sometimes be simplyreferred to as a state in which the exhaust system is closed (a state inwhich the exhaust of the interior of the process chamber 201 by theexhaust system is stopped). Furthermore, in the present disclosure, forthe sake of convenience, the state in which the DIPAS gas issubstantially confined within the process chamber 201, or the state inwhich the DIPAS gas is completely confined within the process chamber201, will sometimes be simply referred to as a state in which the DIPASgas is confined within the process chamber 201.

Even in this modification, the same effects as those of the film formingsequence illustrated in FIG. 4 may be achieved.

Furthermore, according to this modification, the internal pressure ofthe process chamber 201 at step 1 can be set higher than the internalpressure at step 2 or can be set higher than the internal pressure ofthe process chamber 201 at the CVD film forming step. For example, theinternal pressure of the process chamber 201 at step 1 can be set at apressure which falls within a range of 1,000 to 2,000 Pa. The internalpressure of the process chamber 201 at step 2 can be set at a pressurewhich falls within a range of 1 to 100 Pa. The internal pressure of theprocess chamber 201 at the CVD film forming step can be set at apressure which falls within a range of 1 to 500 Pa. In these cases, itis possible to promote the adsorption reaction, mainly the chemisorptionreaction, of DIPAS on the wafer 200 at step 1 (to increase thechemisorption amount of DIPAS), thereby increasing the amount of Sicontained in the adsorption layer of DIPAS. Thus, even if some of Siatoms are desorbed from the adsorption layer of DIPAS by the action ofthe H₂* gas supplied at step 2, it is possible to leave a sufficientamount of Si atoms on the wafer 200. As a result, it is possible toavoid reduction of a cycle rate (seed layer formation rate) at the seedlayer forming step. Furthermore, it is possible to reliably allow theseed layer to become a continuous layer. Moreover, it is possible toincrease the percentage of the DIPAS gas contributed to the formation ofthe seed layer, namely the use efficiency of the DIPAS gas. This makesit possible to reduce the film forming cost (gas cost).

In order to efficiently achieve these effects and the effects accordingto the aforementioned embodiment, it is desirable that the balance ofthe internal pressures of the process chamber 201 between the respectivesteps be controlled so as to satisfy a relationship of P₁>P₃≥P₂,specifically a relationship of P₁>P₃>P₂, where P₁ is the internalpressure of the process chamber 201 at step 1, P₂ is the internalpressure of the process chamber 201 at step 2, and P₃ is the internalpressure of the process chamber 201 at the CVD film forming step.

Furthermore, if the APC valve 244 is completely closed, it is possibleto increase the internal pressure of the process chamber 201 within ashorter period of time and to further increase the seed layer formationrate. Moreover, it is possible to further increase the use efficiency ofthe DIPAS gas and to further reduce the film forming cost. In addition,if the APC valve 244 is slightly opened, it is possible to slightly forma gas flow from the interior of the process chamber 201 to the exhaustpipe 231. Thus, the reaction byproduct generated within the processchamber 201 can be removed from the interior of the process chamber 201.This makes it possible to improve the quality of the film formingprocess.

In the case where the exhaust of the DIPAS gas from the interior of theprocess chamber 201 is stopped at step 1, it is desirable that prior toperforming step 2, the APC valve 244 is opened to exhaust the DIPAS gasfrom the interior of the process chamber 201. By doing so, it ispossible to prevent the generation of an excessive gas phase reactionwithin the process chamber 201, to suppress the generation of anextraneous material within the process chamber 201, and to improve asubstrate processing quality.

Modification 2

The temperature of the wafer 200 (the first temperature) used at step 1,which is the seed layer forming step, may be lowered within theaforementioned condition range and may be set, for example, lower thanthe temperature of the wafer 200 (the second temperature) used at theCVD film forming step. For example, the temperature of the wafer 200used at step 1, which is the seed layer forming step, may be set at atemperature of 25 to 300 degrees C. In this case, the temperature of thewafer 200 used at step 2, which is the seed layer forming step, may beset at the same temperature (25 to 300 degrees C.) as the temperature ofthe wafer 200 used at step 1.

Even in this modification, the same effects as those of the film formingsequence illustrated in FIG. 4 may be achieved. Furthermore, accordingto this modification, by lowering the first temperature, it is possibleto promote the adsorption reaction, mainly the physical adsorptionreaction, of DIPAS on the wafer 200 at step 1 (to increase the physicaladsorption amount of DIPAS), thereby increasing the amount of Sicontained in the adsorption layer of DIPAS. As a result, similar tomodification 1, even if some of Si atoms are desorbed from theadsorption layer of DIPAS by the action of the H₂* gas supplied at step2, it is possible to leave a sufficient amount of Si atoms on the wafer200. As a consequence, it is possible to avoid reduction of a cycle rateat the seed layer forming step. Furthermore, it is possible to reliablyallow the seed layer to become a continuous layer.

Modification 3

Modifications 1 and 2 described above may be combined with each other.That is, at step 1 which is the seed layer forming step, the DIPAS gasmay be substantially or completely confined within the process chamber201. Furthermore, the temperature of the wafer 200 (the firsttemperature) may be lowered within the aforementioned condition rangeand may be set, for example, lower than the temperature of the wafer 200(the second temperature) used at the CVD film forming step. This makesit possible to further promote the adsorption of DIPAS onto the wafer200 at step 1 and to reliably achieve the effects set forth inmodifications 1 and 2.

Modification 4

At step 2, a plasma-excited H₂ gas may be intermittently supplied to theadsorption layer of DIPAS formed on the wafer 200. An H₂ gas may besupplied by intermittently plasma-exciting the same.

For example, as illustrated in FIG. 5, at step 2, an H₂ gas may beintermittently supplied (in a pulse-like manner) from the nozzle 249 binto the buffer chamber 237 while continuously applying the electricpower for plasma-exciting the H₂ gas to between the rod-shapedelectrodes 269 and 270. In addition, for example, as illustrated in FIG.6, at step 2, the electric power for plasma-exciting the H₂ gas may beintermittently applied (in a pulse-like manner) to between therod-shaped electrodes 269 and 270 while continuously supplying the H₂gas from the nozzle 249 b into the buffer chamber 237.

Even in this modification, the same effects as those of the film formingsequence illustrated in FIG. 4 may be achieved. Furthermore, accordingto this modification, it is possible to properly reduce the amount ofthe H₂* gas supplied to the wafer 200, namely the amount of energyapplied to the adsorption layer of DIPAS, and to suppress the desorptionof Si from the adsorption layer of DIPAS. Thus, when step 2 isperformed, it is possible to leave a sufficient amount of Si atoms onthe wafer 200 while sufficiently desorbing the amino ligands from theadsorption layer of DIPAS. As a consequence, it is possible to avoid areduction of a cycle rate at the seed layer forming step. Furthermore,it is possible to reliably allow the seed layer to become a continuouslayer.

Modification 5

As illustrated in FIG. 7, at step 2, a non-plasma-excited H₂ gas may bemixed (post-mixed) with a plasma-excited Ar gas (Ar* gas) within theprocess chamber 201. The Ar gas acts as an indirect excitation gas thatindirectly excites the non-plasma-excited H₂ gas with plasma. In thiscase, the H₂ gas may be supplied into the process chamber 201 via thenozzle 249 a. The Ar gas may be supplied into the buffer chamber 237 viathe nozzle 249 b. The Ar gas may be plasma-excited within the bufferchamber 237 and then may be supplied into the process chamber 201. Thesupply flow rate of the Ar gas controlled by the MFC 241 b may be set ata flow rate which falls within a range of, for example, 100 to 10,000sccm. The high-frequency power applied to between the rod-shapedelectrodes 269 and 270 may be set at electric power which falls within arange of, for example, 50 to 1,000 W. As the indirect excitation gas, itmay be possible to use, in addition to the Ar gas, an N₂ gas or a raregas other than the Ar gas. The film forming sequence of thismodification may be denoted as follows.(DIPAS→H₂+Ar*)×n→SiH₄

Si

Even in this modification, the same effects as those of the film formingsequence illustrated in. FIG. 4 may be achieved. Furthermore, accordingto this modification, it is possible to properly reduce the amount ofenergy of the H₂ gas indirectly excited by the Ar* gas supplied to thewafer 200, namely the adsorption layer of DIPAS, and to suppress thedesorption of Si from the adsorption layer of DIPAS. Thus, when step 2is performed, it is possible to leave a sufficient amount of Si atoms onthe wafer 200 while sufficiently desorbing the amino ligands from theadsorption layer of DIPAS. As a consequence, it is possible to avoid thereduction of a cycle rate at the seed layer forming step. Furthermore,it is possible to reliably allow the seed layer to become a continuouslayer.

Furthermore, the aforementioned effects may be similarly achieved evenin the case where a plasma-excited N₂ gas (N₂* gas) is used as theindirect excitation gas. However, if the N₂ gas is used as the indirectexcitation gas, there may be case where N is added to the seed layer.The use of a rare gas such as an Ar gas or the like as the indirectexcitation gas is desirable in that it is possible to reliably avoidaddition of N into the seed layer.

Modification 6

At step 2 of modification 5, a non-plasma-excited H₂ gas may beintermittently supplied to the adsorption layer of DIPAS formed on thewafer 200, or a plasma-excited Ar gas may be intermittently supplied tothe adsorption layer of DIPAS. Furthermore, at step 2, an Ar gas may besupplied by intermittently plasma-exciting the same. That is, electricpower for plasma-exciting an Ar gas may be intermittently applied.

For example, as illustrated in FIGS. 8 to 11, at step 2, at least one ofthe supply of the H₂ gas into the process chamber 201 via the nozzle 249a, the supply of the Ar gas into the buffer chamber 237 via the nozzle249 b, or the application of the electric power to between therod-shaped electrodes 269 and 270 may not be continuously performed butmay be intermittently performed.

Even in this modification, the same effects as those of the film formingsequence illustrated in. FIG. 4 may be achieved. Furthermore, accordingto this modification, it is possible to more properly reduce the amountof energy of the H₂ gas indirectly excited by the Ar* gas supplied tothe wafer 200, namely the adsorption layer of DIPAS, and to furthersuppress the desorption of Si from the adsorption layer of DIPAS. Thus,when step 2 is performed, it is possible to leave a more sufficientamount of Si atoms on the wafer 200 while sufficiently desorbing theamino ligands from the adsorption layer of DIPAS. As a consequence, itis possible to more reliably avoid the reduction of a cycle rate at theseed layer forming step. Furthermore, it is possible to more reliablyallow the seed layer to become a continuous layer.

Modification 7

At step 2, when the H₂ gas is supplied to the adsorption layer of DIPASformed on the wafer 200, the H₂ gas may be plasma-excited using a remoteplasma unit installed outside the process chamber 201. Furthermore, atstep 2, when the H₂ gas is supplied to the adsorption layer of DIPASformed on the wafer 200, the H₂ gas may be thermally excited by bringingthe H₂ gas into contact with the hot wire 237 h installed in a supplypath of the H₂ gas and kept at an ultra-high temperature.

Even in this modification, the same effects as those of the film formingsequence illustrated in FIG. 4 may be achieved. Furthermore, accordingto this modification, it is possible to properly reduce the amount ofenergy of the H₂* gas supplied to the wafer 200, namely the adsorptionlayer of DIPAS. Thus, the same effects as those of modifications 4 to 6may be achieved.

Modification 8

As described above, as the ligand desorption material, it may bepossible to suitably use, in addition to the H₂ gas or the D₂ gas, areducing gas such as a silicon hydride gas, a boron hydride gas or thelike. In the case where the silicon hydride gas or the boron hydride gasis used as the ligand desorption material, it is desirable that thesilicon hydride gas or the boron hydride gas be supplied in anon-plasma-excited state or in an indirectly-excited state. By doing so,when step 2 is performed, it is possible to leave a more sufficientamount of Si atoms on the wafer 200 while sufficiently desorbing theamino ligands from the adsorption layer of DIPAS. Furthermore, it ispossible to suppress excessive decomposition of the silicon hydride gasor the boron hydride gas and to reduce the resultant influence on a filmquality.

Furthermore, as the ligand desorption material, it may be possible tosuitably use an inert gas, for example, an N₂ gas or a rare gas such asan Ar gas or the like. In the case where the inert gas is used as theligand desorption material, it is desirable that the inert gas besupplied in a plasma-excited state. This is the same as the state inwhich the supply of the H₂ gas is not performed at step 2 ofmodification 5 or 6 at which the H₂ gas is supplied in anindirectly-excited state. Thus, the effects mentioned in modifications 5and 6 may be achieved in a more reliable manner. That is, when step 2 isperformed, it is possible to leave a sufficient amount of Si atoms onthe wafer 200 while sufficiently desorbing the amino ligands from theadsorption layer of DIPAS. Furthermore, as described above, it is moredesirable to use a plasma-excited rare gas as the ligand desorptionmaterial than to use a plasma-excited N₂ gas as the ligand desorptionmaterial, because the use of the plasma-excited rare gas makes itpossible to reliably avoid addition of N into the seed layer.

Even in this modification, the same effects as those of theaforementioned embodiment may be achieved. Some examples of the filmforming sequence of this modification are illustrated below.(DIPAS→SiH₄)×n→SiH₄

Si(DIPAS→B₂H₆)×n→SiH₄

Si(DIPAS→Ar*)×n→SiH₄

Si

Modification 9

As the ligand desorption material, it may be possible to use, inaddition to the reducing gas or the inert gas, ahalogen-element-containing gas. In this case, thehalogen-element-containing gas may include at least one gas selectedfrom a group consisting of a Cl-containing gas and an F-containing gas.

For example, the Cl-containing gas may include at least one gas selectedfrom a group consisting of a Cl₂ gas, an HCl gas and a chlorosilane gassuch as a DCS gas, an HCDS gas or the like. The Cl-containing gas mayinclude a C- and N-free Cl-containing gas.

Furthermore, for example, the F-containing gas may include at least onegas selected from a group consisting of an F₂ gas, an NF₃ gas, a ClF₃gas, an HF gas and a fluorosilane gas such as a SiF₄ gas, a Si₂F₆ gas orthe like. The F-containing gas may include a C- and N-freefluorine-containing gas.

The supply flow rate of the halogen-element-containing gas controlled bythe MFC 241 c or the like may be set at a flow rate which falls within arange of, for example, 100 to 10,000 sccm.

Some examples of the film forming sequence of this modification areillustrated below.(DIPAS→HCl)×n→SiH₄

Si(DIPAS→DCS)×n→SiH₄

Si(DIPAS→SiF₄)×n→SiH₄

Si

Even in this modification, the same effects as those of the film formingsequence illustrated in FIG. 4 may be achieved. Furthermore, if ahalosilane gas (especially, a chlorosilane gas) such as a DCS gas or thelike among the halogen-element-containing gases is used as the liganddesorption material, it is possible to increase a cycle rate at the seedlayer forming step. That is, by supplying a Si-containing halosilane gasat step 2, it is possible to desorb the amino ligands from theadsorption layer of DIPAS, to apply Si contained in the halosilane gasto the Si layer formed at that time, and to make thick the Si layerformed per one cycle. In addition, according to this modification whichmakes use of the active action of the halogen-element-containing gas, itis not necessary to install a plasma generation mechanism or the like.This makes it possible to simplify the structure of the substrateprocessing apparatus, thereby reducing the manufacturing cost or themaintenance cost of the substrate processing apparatus.

The processing procedures and processing conditions used in therespective modifications described above may be similar to theprocessing procedures and processing conditions of the film formingsequence illustrated in FIG. 4.

Other Embodiments of the Present Disclosure

While one embodiment of the present disclosure has been specificallydescribed above, the present disclosure is not limited to theaforementioned embodiment but may be differently modified withoutdeparting from the spirit of the present disclosure.

For example, the present disclosure may be suitably applied to a casewhere various kinds of Si-containing films such as a SiN film, a SiOfilm, a SiCN film, a SiON film, a SiOC film, a SiOCN film, a SiBCN film,a SiBN film and the like are formed on the seed layer.

In this case, for example, a seed layer may be formed by alternatelyperforming the supply of a first precursor and the supply of a liganddesorption material a predetermined number of times (in times). Then,the various kinds of Si-based insulation films mentioned above may beformed by non-simultaneously performing the supply of a second precursorand the supply of a reactant a predetermined number of times (n times).

As the reactant, it may be possible to suitably use, for example, anN-containing gas (N source) such as an ammonia (NH₃) gas or the like, aC-containing gas (C source) such as a propylene (C₃H₆) gas or the like,an O-containing gas (O source) such as an oxygen (O₂) gas or the like,an N- and C-containing gas (N and C source) such as a triethylarnine((C₂H₅)₃N, abbreviation: TEA) gas or the like, and a B-containing gas (Bsource) such as a trichloroborane (BCl₃) gas or the like. These gasesmay be supplied by activating the same with heat or plasma. Someexamples of these film forming sequences are illustrated below.(DIPAS→H₂*)×m→(HCDS→NH₃)×n

SiN(DIPAS→H₂*)×m→(BDEAS→O₂*)×n

SiO(DIPAS→H₂*)×m→(HCDS→C₃H₆→NH₃)×n

SiCN(DIPAS→H₂*)×m→(HCDS→NH₃→O₂)×n

SiON(DIPAS→H₂*)×m→(HCDS→TEA→O₂)×n

SiOC(N)(DIPAS→H₂*)×m→(HCDS→C₃H₆→NH₃→O₂)×n

SiOCN(DIPAS→H₂*)×m→(HCDS→C₃H₆→BCl₃→NH₃)×n

SiBCN(DIPAS→H₂*)×m→(HCDS→BCl₃→NH₃)×n

SiBN

In the foregoing examples, when an oxide film such as a SiO film, a SiONfilm or the like is formed on the wafer 200, an O-containing gas such asan O₂ gas or the like may be supplied as a ligand desorption material ina plasma-excited state. For example, a SiO layer is formed as a seedlayer. A SiO film or a SiON film may be formed on the SiO layer.Furthermore, when a nitride film such as a SiN film, a SiCN film or thelike is formed on the wafer 200, an N-containing gas such as an NH₃ gasor the like may be supplied as a ligand desorption material in aplasma-excited state. For example, a SiN layer is formed as a seedlayer. A SiN film or a SiCN film may be formed on the SiN layer. In thisway, the seed layer and the film formed on the seed layer may becompletely consistent in composition or may be partially consistent incomposition.

The present disclosure may be suitably applied to a case where a filmcontaining a metal element such as titanium (Ti), zirconium (Zr),hafnium (Hf), tantalum (Ta), niobium (Nb), molybdenum (Mo), tungsten(W), yttrium (Y), strontium (Sr), aluminum (Al) or the like, namely ametal film, is formed on the wafer 200. That is, the present disclosuremay be suitably applied to a case where, for example, a Ti film, a Zrfilm, an Hf film, a Ta film, an Nb film, a Mo film, a W film, a Y film,a Sr film or an Al film is formed on the wafer 200.

In this case, as the first precursor, it may be possible to use, forexample, an amino titanium precursor gas containing Ti and anamino-group, such as a tetrakis-ethylmethylamino titanium(Ti[N(C₂H₅)(CH₃)]₄, abbreviation: TEMAT) gas, a tetrakis-dimethylaminotitanium (Ti[N(CH₃)₂]₄, abbreviation: TDMAT) gas, atetrakis-diethylamino titanium (Ti[N(C₂H₅)₂]₄, abbreviation: TDEAT) gasor the like, and an amino hafnium precursor gas containing Hf and anamino group, such as a tetrakis-dimethylamino hafnium (Hf[N(CH₃)₂]₄,abbreviation: TDMAH) gas or the like.

Furthermore, as the ligand desorption material, it may be possible touse the same gases as used in the aforementioned embodiment.

In addition, as the second precursor, it may be possible to use, forexample, a chloro titanium precursor gas containing Ti and a chlorogroup, such as a titanium tetrachloride (TiCl₄) gas or the like, achloro hafnium precursor gas containing Hf and a chloro group, such as ahafnium tetrachloride (HfCl₄) gas or the like, and a gas containing Aland a methyl group, such as a trimethyl aluminum (Al(CH₃)₃,abbreviation: TMA) or the like.

For example, by the film forming sequences denoted below, it is possibleto form a titanium film (Ti film), a titanium aluminum carbide film(TiAlC film), a titanium aluminum nitride film (TiAlN film), a titaniumoxide film (TiO film), a titanium silicon nitride film (TiSiN film), ahafnium silicon oxide film (HfSiO film), a hafnium aluminum oxide film(HfAlO film) or the like on the wafer 200.(TDMAT→H₂*)×n→TiCl₄

Ti(TDMAT→H₂*)×m→(TiCl₄→TMA)×n

TiAlC(TDMAT→H₂*)×m→(TiCl₄→TMA→NH₃)×n

TiAlN(TDMAT→H₂*)×m→(TiCl₄→O₂)×n

TiO(TDMAT→H₂*)×m→(TiCl₄→3DMAS→NH₃)×n

TiSiN(TDMAH→H₂*)×m→(HfCl₄→3DMAS→O₂)×n

HfSiO(TDMAH→H₂*)×m→(HfCl₄→TMA→O₂)×n

HfAlO

As described above, by appropriately selecting the kinds of the firstprecursor, the ligand desorption material and the second precursor, itis possible to form various kinds of metal-containing films such as ametal film, a metal carbide film, a metal nitride film, a metal oxidefilm and the like.

That is, the present disclosure may be suitably applied to a case wherea film containing a semiconductor element or a metal element is formed.The processing procedures and processing conditions of the film formingprocess may be similar to the processing procedures and processingconditions of the embodiment or the modifications described above. Evenin this case, the same effects as those of the embodiment or themodifications described above may be achieved.

Recipes (programs describing processing procedures and processingconditions) used in substrate processing may be prepared individuallyaccording to the processing contents (the kind, composition ratio,quality, film thickness, processing procedure and processing conditionof the film as formed) and may be stored in the memory device 121 c viaa telecommunication line or the external memory device 123. Moreover, atthe start of substrate processing, the CPU 121 a may properly select anappropriate recipe from the recipes stored in the memory device 121 caccording to the processing contents. Thus, it is possible for a singlesubstrate processing apparatus to form films of different kinds,composition ratios, qualities and thicknesses with enhancedreproducibility. In addition, it is possible to reduce an operator'sburden (e.g., a burden borne by an operator when inputting processingprocedures and processing conditions) and to quickly start the substrateprocessing while avoiding an operation error.

The recipes mentioned above are not limited to newly-prepared ones butmay be prepared by, for example, modifying the existing recipes alreadyinstalled in the substrate processing apparatus. When modifying therecipes, the modified recipes may be installed in the substrateprocessing apparatus via a telecommunication line or a recording mediumstoring the recipes. In addition, the existing recipes already installedin the substrate processing apparatus may be directly modified byoperating the input/output device 122 of the existing substrateprocessing apparatus.

In the aforementioned embodiment, there has been described an example inwhich films are formed using a batch-type substrate processing apparatuscapable of processing a plurality of substrates at a time. The presentdisclosure is not limited to the aforementioned embodiment but may beappropriately applied to, e.g., a case where films are formed using asingle-wafer-type substrate processing apparatus capable of processing asingle substrate or several substrates at a time. In addition, in theaforementioned embodiment, there has been described an example in whichfilms are formed using a substrate processing apparatus provided with ahot-wall-type processing furnace. The present disclosure is not limitedto the aforementioned embodiment but may be appropriately applied to acase where films are formed using a substrate processing apparatusprovided with a cold-wall-type processing furnace. Even in these cases,the processing procedures and the processing conditions may be similarto, for example, the processing procedures and the processing conditionsof the aforementioned embodiment.

The present disclosure may be suitably applied to, e.g., a case where afilm is formed using a substrate processing apparatus provided with aprocessing furnace 302 illustrated in FIG. 12A. The processing furnace302 includes a process vessel 303 which defines a process chamber 301, ashower head 303 s as a gas supply part configured to supply a gas intothe process chamber 301 in a shower-like manner, a support table 317configured to horizontally support one or more wafers 200, a rotaryshaft 355 configured to support the support table 317 from below, and aheater 307 installed in the support table 317. Gas supply ports 332 aand 332 b are connected to inlets (gas introduction holes) of the showerhead 303 s. A gas supply system similar to the first supply system andthe second supply system of the aforementioned embodiment is connectedto the gas supply port 332 a. A remote plasma unit (plasma generationdevice) 339 b as an excitation part for plasma-exciting and supplying agas and a gas supply system similar to the third supply system of theaforementioned embodiment are connected to the gas supply port 332 b. Agas distribution plate configured to supply a gas into the processchamber 301 in a shower-like manner is installed in outlets (gasdischarge holes) of the shower head 303 s. The shower head 303 s isinstalled in such a position as to face the surfaces of the wafers 200carried into the process chamber 301. An exhaust port 331 configured toevacuate the interior of the process chamber 301 is installed in theprocess vessel 303. An exhaust system similar to the exhaust system ofthe aforementioned embodiment is connected to the exhaust port 331.

In addition, the present disclosure may be suitably applied to, e.g., acase where a film is formed using a substrate processing apparatusprovided with a processing furnace 402 illustrated in FIG. 12B. Theprocessing furnace 402 includes a process vessel 403 which defines aprocess chamber 401, a support table 417 configured to horizontallysupport one or more wafers 200, a rotary shaft 455 configured to supportthe support table 417 from below, a lamp heater 407 configured toirradiate light toward the wafers 200 disposed in the process vessel403, and a quartz window 403 w which transmits the light irradiated fromthe lamp heater 407. Gas supply ports 432 a and 432 b are connected tothe process vessel 403. A supply system similar to the first supplysystem and the second supply system of the aforementioned embodiment isconnected to the gas supply port 432 a. The aforementioned remote plasmaunit 339 b and a supply system similar to the third supply system of theaforementioned embodiment are connected to the gas supply port 432 b.The gas supply ports 432 a and 432 b are respectively installed at thelateral side of the end portions of the wafers 200 carried into theprocess chamber 401, namely in such positions as not to face thesurfaces of the wafers 200 carried into the process chamber 401. Anexhaust port 431 configured to evacuate the interior of the processchamber 401 is installed in the process vessel 403. An exhaust systemsimilar to the exhaust system of the aforementioned embodiment isconnected to the exhaust port 431.

In the case of using these substrate processing apparatuses, a filmforming process may be performed by the processing procedures andprocessing conditions similar to those of the embodiment andmodifications described above. Effects similar to those of theembodiment and modifications described above may be achieved.

The embodiment and modifications described above may be appropriatelycombined with one another. In addition, the processing procedures andprocessing conditions used at this time may be similar to, for example,the processing procedures and processing conditions of the film formingsequence illustrated in FIG. 4.

According to the present disclosure in some embodiments, it is possibleto improve a quality of a film formed on a substrate.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the novel methods and apparatusesdescribed herein may be embodied in a variety of other forms;furthermore, various omissions, substitutions and changes in the form ofthe embodiments described herein may be made without departing from thespirit of the disclosures. The accompanying claims and their equivalentsare intended to cover such forms or modifications as would fall withinthe scope and spirit of the disclosures.

What is claimed is:
 1. A method of manufacturing a semiconductor device, comprising: (a) forming a seed layer containing a predetermined element on a substrate by performing a process multiple times, the process including performing: (a-1) supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and (a-2) supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor, thereby lowering concentration of the at least one of carbon or nitrogen from the adsorption layer; and (b) supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer, wherein (a-1) and (a-2) are alternately performed in (a), and wherein a pressure at a space where the substrate is located in (a-1) is set higher than a pressure at a space where the substrate is located in (a-2).
 2. The method of claim 1, wherein a pressure at a space where the substrate is located in (a-1) is set higher than a pressure at a space where the substrate is located in (b).
 3. The method of claim 1, wherein a supply flow rate of the first precursor in (a-1) is set higher than an exhaust flow rate of the first precursor exhausted from a space where the substrate is located in (a-1).
 4. The method of claim 1, wherein in (a-1), the first precursor is exhausted from a space where the substrate is located while supplying the first precursor into the space, and at this time, a supply flow rate of the first precursor supplied into the space is set higher than an exhaust flow rate of the first precursor exhausted from the space.
 5. The method of claim 1, wherein in (a-1), an exhaust of the first precursor from a space where the substrate is located is stopped.
 6. The method of claim 1, wherein the ligand desorption material includes a reducing gas.
 7. The method of claim 1, wherein the ligand desorption material includes a plasma-excited reducing gas.
 8. The method of claim 1, wherein the ligand desorption material includes a non-plasma-excited reducing gas.
 9. The method of claim 1, wherein the ligand desorption material includes a plasma-excited gas.
 10. The method of claim 1, wherein the ligand desorption material includes a plasma-excited hydrogen-containing gas.
 11. The method of claim 1, wherein the ligand desorption material includes a plasma-excited inert gas.
 12. The method of claim 1, wherein the ligand desorption material includes a plasma-excited inert gas and a non-plasma-excited reducing gas.
 13. The method of claim 1, wherein the ligand desorption material includes a halogen-element-containing gas.
 14. The method of claim 1, wherein (a-1) is performed under a condition in which the first precursor is not pyrolyzed, and (b) is performed under a condition in which the second precursor is pyrolyzed.
 15. The method of claim 1, wherein an insulation film is formed on a surface of the substrate, and the seed layer is formed on the insulation film. 